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| Opto Semiconductors BLUE LINETM Hyper TOPLED(R) Hyper-Bright LED Besondere Merkmale * * * * * * * * Gehausebauform: P-LCC-2 Gehausefarbe: wei als optischer Indikator einsetzbar zur Hintergrundbeleuchtung, Lichtleiter- und Linseneinkopplung fur alle SMT-Bestuck- und Lottechniken geeignet gegurtet (8 mm-Filmgurt) ESD-sicher bis 2 kV nach MIL STD 883D, Method 3015.7 JEDEC Level 2 LB T676 Features * * * * * * * P-LCC-2 package color of package: white for use as optical indicator for backlighting, optical coupling into light pipes and lenses suitable for all SMT assembly and soldering methods available taped on reel (8 mm tape) ESD withstand voltage of 2 kV according to MIL STD 883D, Method 3015.7 * JEDEC Level 2 Typ Emissionsfarbe Color of Emission Farbe der Lichtaustrittsflache Color of the Light Emitting Area colorless clear 4.0 5.0 6.3 8.0 10.0 ... ... ... ... ... 6.3 8.0 10.0 12.5 16.0 15 (typ.) 20 (typ.) 25 (typ.) 30 (typ.) 40 (typ.) Lichtstarke Lichtstrom Bestellnummer Type Luminous Intensity IF = 10 mA I V (mcd) Luminous Flux IF = 10 mA V (mlm) Ordering Code LB T676 LB T676-J1 LB T676-J2 LB T676-K1 LB T676-K2 LB T676-L1 blue Q62703-Q3786 Streuung der Lichtstarke in einer Verpackungseinheit I V max / I V min 1.6. Luminous intensity ratio in one packaging unit I V max / I V min 1.6. Helligkeitswerte werden bei einer Strompulsdauer von 25 ms spezifiziert. Luminous intensity is specified at a current pulse duration of 25 ms. Semiconductor Group 1 1999-05-01 VPL06724 Opto Semiconductors LB T676 Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Durchlastrom Forward current Sperrspanung1) Reverse voltage1) Verlustleistung Power dissipation TA 25 C Warmewiderstand Thermal resistance Sperrschicht / Umgebung Junction / air Montage auf PC-board*) (Padgroe 16 mm2) mounted on PC board*) (pad size 16 mm2) 1) 1) Symbol Symbol Werte Values - 40 ... + 100 - 40 ... + 100 + 100 20 5 100 Einheit Unit C C C mA V mW Top Tstg Tj IF VR Ptot Rth JA 500 K/W Belastung in Sperrichtung sollte vermieden werden. Reverse biasing should be avoided. *) PC-board: FR4 Semiconductor Group 2 1999-05-01 Opto Semiconductors LB T676 Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Wellenlange des emittierten Lichtes Wavelength at peak emission IF = 10 mA Dominantwellenlange Dominant wavelength IF = 10 mA Spektrale Bandbreite bei 50% Irel max Spectral bandwidth at 50% Irel max IF = 10 mA Abstrahlwinkel bei 50% Iv (Vollwinkel) Viewing angle at 50% Iv Durchlaspannung Forward voltage IF = 10 mA Sperrstrom Reverse current VR = 5 V Temperaturkoeffizient von dom (IF = 10 mA) Temperature coefficient of dom (IF = 10 mA) Temperaturkoeffizient von peak (IF = 10 mA) Temperature coefficient of peak (IF = 10 mA) Temperaturkoeffizient von VF (IF = 10 mA) Temperature coefficient of VF (IF = 10 mA) Symbol Symbol typ. Werte Values max. - nm 428 Einheit Unit peak dom 466 - nm 60 - nm 2 120 3.5 - 4.2 Grad deg. V VF IR 0.01 10 A TC TC TCV 0.03 0.004 - 3.1 - - - nm/K nm/K mV/K Semiconductor Group 3 1999-05-01 Opto Semiconductors LB T676 Relative spektrale Emission I rel = f (), TA = 25 C, IF = 10 mA Relative spectral emission V() = spektrale Augenempfindlichkeit Standard eye response curve 100 rel % 80 blue OHL00431 V 60 40 20 0 350 400 450 500 550 600 650 nm 700 Abstrahlcharakteristik Irel = f () Radiation characteristic 40 30 20 10 0 OHL01660 1.0 50 0.8 0.6 60 0.4 70 0.2 80 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 0 Semiconductor Group 4 1999-05-01 Opto Semiconductors LB T676 Durchlastrom IF = f (VF) Forward current TA = 25 C 10 2 OHL00432 Relative Lichtstarke IV/IV(10 mA) = f (IF) Relative luminous intensity TA = 25 C V 10 1 OHL00433 F 5 V (10 mA) 10 0 10 1 5 5 10 -1 5 10 0 5 10 -2 5 10 -1 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 V 6.0 10 -3 -1 10 5 10 0 5 10 1 VF F mA 10 2 Maximal zulassiger Durchlastrom Max. permissible forward current IF = f (TA) 30 OHL00448 Relative Lichtstarke IV/IV(25 C) = f (TA) Relative luminous intensity IF = 10 mA V 1.2 1.0 OHL00442 F mA 25 V (25 C) 20 0.8 15 0.6 10 0.4 5 0.2 0 0 20 40 60 80 C 100 TA 0 -20 0 20 40 60 C TA 100 Semiconductor Group 5 1999-05-01 Opto Semiconductors LB T676 Mazeichnung Package Outlines (Mae in mm, wenn nicht anders angegeben) (Dimensions in mm, unless otherwise specified) 3.0 2.6 2.3 2.1 2.1 1.7 0.1 (typ) 0.9 0.7 3.4 3.0 2.4 0.8 0.6 Cathode/Collector marking Approx. weight 0.03 g 1.1 0.5 0.18 0.6 0.12 0.4 Cathode/Collector GPL06724 Kathodenkennung: abgeschragte Ecke Cathode mark: bevelled edge Semiconductor Group 6 3.7 3.3 1999-05-01 |
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